CLUSTER SECONDARY ION EMISSION FROM THE NANOSIZED SILICON SAMPLES

Time–of–flight secondary ion mass spectrometry was used to studycluster emission of three kind of Si samples with different dimensional features – massivesingle–crystal wafer, pressed pellet made of 60 nm in diameter particles and holographical grating consisted of the columns of 200 nm in height and 160 nm in diameter. It was shown that under 25 keV Bi₃⁺ion–beambombardment both nanosized samples exhibited more intense negative cluster secondary ion emission as compared with massive Si sample. The «nanoscale effect of sputtering» was found to be more pronounced for large Si_n– clusters with n>7 and for pressed nanopowder pellet, in which individual particles are more isolated than in the columns formed holographic grating.

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