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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">koz</journal-id><journal-title-group><journal-title xml:lang="ru">"Вестник Северо-Казахстанского университета имени Манаша Козыбаева"</journal-title><trans-title-group xml:lang="en"><trans-title>Bulletin of Manash Kozybayev North Kazakhstan University</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2958-003X</issn><issn pub-type="epub">2958-0048</issn><publisher><publisher-name>М. Қозыбаев атындағы СҚУ</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">koz-34</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ТЕХНИЧЕСКИЕ НАУКИ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>TECHNICAL SCIENCES</subject></subj-group></article-categories><title-group><article-title>КЛАСТЕРНАЯ ВТОРИЧНАЯ ЭМИССИЯ ИОНОВ ИЗ НАНОРАЗМЕРНЫХ ОБРАЗЦОВ КРЕМНИЯ</article-title><trans-title-group xml:lang="en"><trans-title>CLUSTER SECONDARY ION EMISSION FROM THE NANOSIZED SILICON SAMPLES</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Толстогузов</surname><given-names>А.</given-names></name><name name-style="western" xml:lang="en"><surname>Tolstoguzov</surname><given-names>A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Александр Толстогузов </p><p>Капарика</p></bio><bio xml:lang="en"><p>Alexander Tolstoguzov </p><p>Caparica</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">Центр физико – технических исследований (Цефитек)<country>Португалия</country></aff><aff xml:lang="en">Centre for Physics and Technological Research (CeFITec)<country>Portugal</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>08</day><month>08</month><year>2021</year></pub-date><volume>0</volume><issue>1 (42)</issue><fpage>184</fpage><lpage>189</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Толстогузов А., 2021</copyright-statement><copyright-year>2021</copyright-year><copyright-holder xml:lang="ru">Толстогузов А.</copyright-holder><copyright-holder xml:lang="en">Tolstoguzov A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://vestnik.ku.edu.kz/jour/article/view/34">https://vestnik.ku.edu.kz/jour/article/view/34</self-uri><abstract><p>Времяпролетная вторичная ионная масс–спектрометрия использовалась для исследования кластерной эмиссии трех видов образцов Si с различными размерными особенностями – массивной монокристаллической пластины, прессованной таблетки из частиц диаметром 60 нм и голографической решетки, состоящей из колонок длиной 200 нм и высотой 160 нм в диаметре. Было показано, что при ионно–лучевой бомбардировке Bi3 + с энергией 25 кэВ оба наноразмерных образца демонстрируют более интенсивную отрицательную кластерную вторичную ионную эмиссию по сравнению с массивным образцом Si. Было обнаружено, что «наноразмерный эффект распыления» более выражен для крупных кластеров Sin с n–7 и для прессованной таблетки нанопорошка, в которой отдельные частицы более изолированы, чем в столбцах, образованных голографической решеткой.</p></abstract><trans-abstract xml:lang="en"><p>Time–of–flight secondary ion mass spectrometry was used to studycluster emission of three kind of Si samples with different dimensional features – massivesingle–crystal wafer, pressed pellet made of 60 nm in diameter particles and holographical grating consisted of the columns of 200 nm in height and 160 nm in diameter. It was shown that under 25 keV Bi3+ion–beambombardment both nanosized samples exhibited more intense negative cluster secondary ion emission as compared with massive Si sample. The «nanoscale effect of sputtering» was found to be more pronounced for large Sin– clusters with n&gt;7 and for pressed nanopowder pellet, in which individual particles are more isolated than in the columns formed holographic grating.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>кластер</kwd><kwd>наночастицы</kwd><kwd>эмиссия (выброс) отрицательных ионов</kwd><kwd>кремний</kwd><kwd>напыление</kwd><kwd>времяпролетная вторичная ионная масс–спектрометрия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>cluster</kwd><kwd>nanoparticles</kwd><kwd>negative ion emission</kwd><kwd>silicon</kwd><kwd>sputtering</kwd><kwd>time–of–flight secondary ion mass spectrometry</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Richter C–E, Trapp M. Atomic and cluster ion emission from silicon in secondary–ion mass spectrometry: I. Sin and SinOr ions. Intern. J. Mass Spectrom. 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